Avalanche Energy Rating (Eas) 34 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 367A
Continuous Drain Current (ID) 21A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta 37W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ