NVMFS5C628NLT3G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 52nC @ 10V 900A 3.7W Ta 110W Tc 60V
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 565 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 900A
Drain-source On Resistance-Max 0.0033Ohm
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Vgs(th) (Max) @ Id 2V @ 135μA
Rds On (Max) @ Id, Vgs 2.4m Ω @ 50A, 10V
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.7W Ta 110W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Reference Standard AEC-Q101
Reach Compliance Code not_compliant
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Pbfree Code yes
JESD-609 Code e3
Published 2015
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 38 Weeks
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