Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 2.4V @ 250μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 20A, 10V
Element Configuration Single
Power Dissipation-Max 3.7W Ta 127W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ