NVMFS5113PLT1G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 64A SO8FL
PDF
/
Buying Options
Total Price: USD $1.88
Unit Price: USD $1.88349
≥1 USD $1.88349
≥10 USD $1.77688
≥100 USD $1.6763
≥500 USD $1.58141
≥1000 USD $1.4919
≥3000 USD $1.40745
Inventory: 5039
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.8W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Ta 64A Tc
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) -10A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 175°C
Dimensions
Height 1.1mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
NVMFS5113PLT1G+price,NVMFS5113PLT1G+datasheet,NVMFS5113PLT1G+in stock,buy+NVMFS5113PLT1G,finder+NVMFS5113PLT1G,NVMFS5113PLT1G+tutorials,NVMFS5113PLT1G+download