NVMFS4C03NT3G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 31.4A SO8FL
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 549 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 900A
Drain-source On Resistance-Max 0.0024Ohm
Continuous Drain Current (ID) 143A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 45.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 31.4A Ta 143A Tc
Input Capacitance (Ciss) (Max) @ Vds 3071pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 2.1m Ω @ 30A, 10V
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.71W Ta 77W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Reference Standard AEC-Q101
Reach Compliance Code not_compliant
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e3
Published 2014
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time 38 Weeks
Alternative Model
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