NVMFS4C01NT3G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 49A SO8FL
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Buying Options
Total Price: USD $4.83
Unit Price: USD $4.83265
≥1 USD $4.83265
≥10 USD $3.9653
≥100 USD $3.8418
≥500 USD $3.71735
≥1000 USD $3.59385
Inventory: 1139
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 38 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.84W Ta 161W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10144pF @ 15V
Current - Continuous Drain (Id) @ 25°C 49A Ta 319A Tc
Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 319A
Drain-source On Resistance-Max 0.00095Ohm
Pulsed Drain Current-Max (IDM) 900A
DS Breakdown Voltage-Min 30V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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