Avalanche Energy Rating (Eas) 288 mJ
Pulsed Drain Current-Max (IDM) 175A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 12.7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 95A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 11.5V
Current - Continuous Drain (Id) @ 25°C 12.7A Ta 95A Tc
Input Capacitance (Ciss) (Max) @ Vds 2865pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.41W Ta 79W Tc
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ