Turn-Off Delay Time 107 ns
Continuous Drain Current (ID) 77A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 285A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 470 mJ
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 14m Ω @ 72A, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 217W Tc
Reference Standard AEC-Q101
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ