NVB6410ANT4G
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFET D2PAK 100V 76A 13MOH
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 500 mJ
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 76A
Turn-Off Delay Time 120 ns
Fall Time (Typ) 190 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 170 ns
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 13m Ω @ 76A, 10V
FET Type N-Channel
Turn On Delay Time 17 ns
Case Connection DRAIN
Power Dissipation 188W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 188W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 25 Weeks
Alternative Model
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