NVB60N06T4G
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 60A Ta 60A 2.4W Ta 150W Tj 142.5ns
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Buying Options
Total Price: USD $12.98
Unit Price: USD $12.97985
≥1 USD $12.97985
≥10 USD $10.65045
≥100 USD $10.31795
≥500 USD $9.9845
≥1000 USD $9.652
Inventory: 1210
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 25 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Technical
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.4W Ta 150W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 25.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Rise Time 180.7ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 142.5 ns
Turn-Off Delay Time 94.5 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 454 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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