NVB5860NT4G
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 220A Tc 220A 283W Tc 66ns
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Dimensions
Width 9.65mm
Length 10.29mm
Height 4.83mm
Technical
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 660A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 220A
Turn-Off Delay Time 66 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 220A Tc
Input Capacitance (Ciss) (Max) @ Vds 10760pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3m Ω @ 75A, 10V
FET Type N-Channel
Turn On Delay Time 27 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 283W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Reference Standard AEC-Q101
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
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