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NVB5426NT4G

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 120A D2PAK
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Turn-Off Delay Time 105 ns
Fall Time (Typ) 95 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Rise Time 100ns
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 6m Ω @ 60A, 10V
FET Type N-Channel
Turn On Delay Time 15 ns
Element Configuration Single
Power Dissipation-Max 215W Tc
Pin Count 3
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ

Physical

Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 1 week ago)

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