Avalanche Energy Rating (Eas) 800 mJ
DS Breakdown Voltage-Min 40V
Pulsed Drain Current-Max (IDM) 280A
Drain-source On Resistance-Max 0.0058Ohm
Drain Current-Max (Abs) (ID) 16.5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 116A
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16.5A Ta 116A Tc
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 32V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Rds On (Max) @ Id, Vgs 5.8m Ω @ 40A, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta 150W Tc
Reference Standard AEC-Q101
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ