Avalanche Energy Rating (Eas) 95 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 114A
Drain-source On Resistance-Max 0.0295Ohm
Drain Current-Max (Abs) (ID) 38A
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Current - Continuous Drain (Id) @ 25°C 38A Ta
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Rds On (Max) @ Id, Vgs 29.5m Ω @ 18A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 60W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ