DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 290A
Drain-source On Resistance-Max 0.013Ohm
Continuous Drain Current (ID) 50A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 9.3m Ω @ 25A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta 46W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ