Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta 27A Tc
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 17m Ω @ 10A, 10V
Element Configuration Single
Power Dissipation-Max 690mW Ta 20.2W Tc
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ