DS Breakdown Voltage-Min 30V
Drain Current-Max (Abs) (ID) 67A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta 67A Tc
Input Capacitance (Ciss) (Max) @ Vds 3366pF @ 15V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 810mW Ta 31W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ