NTTFS4941NTWG
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.3A 8WDFN
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Buying Options
Total Price: USD $8.04
Unit Price: USD $8.0351
≥1 USD $8.0351
≥10 USD $6.593
≥100 USD $6.38685
≥500 USD $6.1807
≥1000 USD $5.97455
Inventory: 1309
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Lifecycle Status LIFETIME (Last Updated: 5 days ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Power Dissipation-Max 840mW Ta 25.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1619pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs 22.8nC @ 10V
Rise Time 21 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.009Ohm
DS Breakdown Voltage-Min 30V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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