DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0055Ohm
Drain Current-Max (Abs) (ID) 11A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 79A
Turn-Off Delay Time 29 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 46.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta 79A Tc
Input Capacitance (Ciss) (Max) @ Vds 3111pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 4m Ω @ 20A, 10V
Transistor Application SWITCHING
Turn On Delay Time 15.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 850mW Ta 43W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ