Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 476pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta 23A Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 9.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.2A
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 45A
Power Dissipation-Max 790mW Ta 20.2W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ