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NTTFS4840NTWG

ON Semiconductor
RoHS
/
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET NFET U8FL 30V 26A 24mOHM
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-XDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 840mW Ta 27.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
Turn On Delay Time 10.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta 26A Tc
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Turn-Off Delay Time 11.5 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.6A
Drain-source On Resistance-Max 0.036Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 77A

Dimensions

Height 800μm
Length 3.15mm
Width 3.15mm

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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