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NTTFS4800NTWG

ON Semiconductor
RoHS
/
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET NFET U8FL 30V 28A 20mOHM
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Buying Options
Total Price: USD $5.37
Unit Price: USD $5.37035
≥1 USD $5.37035
≥10 USD $4.4061
≥100 USD $4.26835
≥500 USD $4.1306
≥1000 USD $3.99285
Inventory: 1273
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-XDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 860mW Ta 33.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
Turn On Delay Time 11.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 964pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs 16.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Avalanche Energy Rating (Eas) 36.6 mJ
Pulsed Drain Current-Max (IDM) 57A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.027Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.3A

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC

Dimensions

Width 3.15mm
Length 3.15mm
Height 800μm

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