Drain to Source Breakdown Voltage -30V
Drain-source On Resistance-Max 0.2Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -1.95A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.13A Ta
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 1.95A, 10V
Transistor Application SWITCHING
Turn On Delay Time 5.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 400mW Tj
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ