Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Power Dissipation-Max 400mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.2 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1.95A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.13A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 1.95A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V