Drain to Source Breakdown Voltage -8V
Drain-source On Resistance-Max 0.052Ohm
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -3.7A
Turn-Off Delay Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1173pF @ 4V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 52m Ω @ 3.5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 960mW Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ