NTR1P02T3G
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 1A SOT-23
PDF
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥100 USD $0.21375
≥500 USD $0.2071
≥1000 USD $0.20045
Inventory: 506995
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 5V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage -20V
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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