NTP8G206NG
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel GaNFET (Gallium Nitride) Mosfet Transistor 17A Tc 17A 96W Tc 9.7ns
PDF
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Buying Options
Total Price: USD $23.76
Unit Price: USD $23.760298
≥1 USD $23.760298
≥10 USD $22.415369
≥100 USD $21.146578
≥500 USD $19.949601
≥1000 USD $18.820374
Inventory: 1140
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Dimensions
Width 4.83mm
Length 10.53mm
Height 15.75mm
Technical
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 18V
Threshold Voltage 2.1V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 9.7 ns
Vgs (Max) ±18V
Drive Voltage (Max Rds On,Min Rds On) 8V
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 480V
Vgs(th) (Max) @ Id 2.6V @ 500μA
Rds On (Max) @ Id, Vgs 180m Ω @ 11A, 8V
FET Type N-Channel
Turn On Delay Time 6.2 ns
Power Dissipation-Max 96W Tc
Technology GaNFET (Gallium Nitride)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2015
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
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