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NTP60N06L

ON Semiconductor
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 60A TO220AB
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status Non-RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 454 mJ
Pulsed Drain Current-Max (IDM) 180A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.016Ohm
Gate to Source Voltage (Vgs) 15V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 100 ns
Fall Time (Typ) 237 ns
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 5V
Rise Time 576ns
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Input Capacitance (Ciss) (Max) @ Vds 3075pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 16m Ω @ 30A, 5V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta 150W Tj
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 60A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 60V
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2005
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

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