Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Power Dissipation-Max 2.4W Ta 150W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 94.5 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.014Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 454 mJ