NTP5860NLG
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 220A Tc 220A 283W 144ns
PDF
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Buying Options
Total Price: USD $10.31
Unit Price: USD $10.3056
≥1 USD $10.3056
≥10 USD $8.45595
≥100 USD $8.19185
≥500 USD $7.9268
≥1000 USD $7.6627
Inventory: 3792
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 283W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 283W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10760pF @ 25V
Current - Continuous Drain (Id) @ 25°C 220A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 144 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 220A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 660A
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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