NTP45N06G
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 45A TO220AB
PDF
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Buying Options
Total Price: USD $6.29
Unit Price: USD $6.289
≥1 USD $6.289
≥10 USD $5.1604
≥100 USD $4.9989
≥500 USD $4.83835
≥1000 USD $4.67685
Inventory: 1235
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 45A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.4W Ta 125W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1725pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 101ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 106 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 45A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.026Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 240 mJ
Nominal Vgs 2.8 V
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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