Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 150mA
Turn-Off Delay Time 196 ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 15V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 3.5 Ω @ 100mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125mW Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ