Drain Current-Max (Abs) (ID) 0.281A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 281mA
Turn-Off Delay Time 178 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 1.1nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 281mA Ta
Input Capacitance (Ciss) (Max) @ Vds 44pF @ 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 1.3 Ω @ 200mA, 4.5V
Element Configuration Single
Power Dissipation-Max 155mW Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ