NTMSD3P102R2G
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 2.34A 8-SOIC
PDF
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Buying Options
Total Price: USD $24.03
Unit Price: USD $24.0255
≥1 USD $24.0255
≥10 USD $19.71345
≥100 USD $19.09785
≥500 USD $18.4813
≥1000 USD $17.8657
Inventory: 1093
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series FETKY?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating -3.05A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 730mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Current - Continuous Drain (Id) @ 25°C 2.34A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 2.34A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Feedback Cap-Max (Crss) 135 pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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