Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.009Ohm
Drain Current-Max (Abs) (ID) 9.4A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11.6A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 7.8A Ta
Input Capacitance (Ciss) (Max) @ Vds 1376pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 9m Ω @ 12A, 10V
Transistor Application SWITCHING
Turn On Delay Time 9.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 890mW Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ