DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.024Ohm
Drain Current-Max (Abs) (ID) 5.5A
Continuous Drain Current (ID) 4.5A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 24m Ω @ 6.9A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 680mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ