Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) -8.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.6A
Drain to Source Breakdown Voltage -30V
Current - Continuous Drain (Id) @ 25°C 6.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 24V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 12m Ω @ 11.4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 840mW Ta
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ