NTMS4101PR2
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 6.9A 8-SOIC
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Technical Details
Technical
Continuous Drain Current (ID) 6.9A
Drain-source On Resistance-Max 0.019Ohm
Pulsed Drain Current-Max (IDM) 30A
Vgs (Max) ±8V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 10V
Vgs(th) (Max) @ Id 450mV @ 250μA
Rds On (Max) @ Id, Vgs 19m Ω @ 6.9A, 4.5V
Transistor Application SWITCHING
FET Type P-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.38W Tj
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G8
Pin Count 8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating -6.5A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -20V
Subcategory Other Transistors
HTS Code 8541.29.00.95
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Physical
Transistor Element Material SILICON
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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