NTMKB4895NT1G
RoHS
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Package 4-ICEPAK
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 82A 4-Pin ICEPAK C-PAD T/R
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 80 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 120A
Drain-source On Resistance-Max 0.006Ohm
Drain Current-Max (Abs) (ID) 15A
Continuous Drain Current (ID) 66A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Ta 66A Tc
Input Capacitance (Ciss) (Max) @ Vds 1644pF @ 15V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Rds On (Max) @ Id, Vgs 6m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.2W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XBCC-N2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form NO LEAD
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case 4-ICEPAK
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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