NTMFS6B03NT1G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
ON SEMICONDUCTOR NTMFS6B03NT1G MOSFET Transistor, N Channel, 132 A, 100 V, 0.0038 ohm, 10 V, 4 V
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Buying Options
Total Price: USD $6.71
Unit Price: USD $6.7127
≥1 USD $6.7127
≥10 USD $5.5081
≥100 USD $5.3352
≥500 USD $5.16325
≥1000 USD $4.9913
Inventory: 1088
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Dimensions
Width 5.1mm
Length 6.1mm
Height 1.05mm
Technical
Pulsed Drain Current-Max (IDM) 470A
Drain-source On Resistance-Max 0.0048Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 132A
Turn-Off Delay Time 29 ns
Fall Time (Typ) 11 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 100V
Rise Time 46 ns
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Ta 132A Tc
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.8m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 16 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.4W Ta 165W Tc
Number of Channels 1
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2014
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 5
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 16 Weeks
Alternative Model
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