NTMFS5H409NLT3G
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 41A SO8FL
PDF
/
Buying Options
Total Price: USD $2.06
Unit Price: USD $2.0592
≥1 USD $2.0592
≥10 USD $1.85152
≥100 USD $1.746624
≥500 USD $1.397176
≥1000 USD $1.222531
≥3000 USD $1.187613
Inventory: 1173
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.2W Ta 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 20V
Current - Continuous Drain (Id) @ 25°C 41A Ta 270A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 270A
Drain-source On Resistance-Max 0.0016Ohm
Pulsed Drain Current-Max (IDM) 900A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 304 mJ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
NTMFS5H409NLT3G+price,NTMFS5H409NLT3G+datasheet,NTMFS5H409NLT3G+in stock,buy+NTMFS5H409NLT3G,finder+NTMFS5H409NLT3G,NTMFS5H409NLT3G+tutorials,NTMFS5H409NLT3G+download