Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 38A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta 38A Tc
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 15V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Rds On (Max) @ Id, Vgs 9.1m Ω @ 30A, 10V
Element Configuration Single
Power Dissipation-Max 750mW Ta
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ