NTMFS4C08NT1G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 52A SO8FL
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.6916
≥1 USD $0.6916
≥10 USD $0.5681
≥100 USD $0.55005
≥500 USD $0.532
≥1000 USD $0.5149
≥3000 USD $0.4617
Inventory: 28619
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 760mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1113pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Ta 52A Tc
Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V
Rise Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 52A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 30V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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