DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.004Ohm
Drain Current-Max (Abs) (ID) 11.9A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21.7A Ta 78A Tc
Input Capacitance (Ciss) (Max) @ Vds 1972pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 2.8m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.57W Ta 33W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ