DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0019Ohm
Drain Current-Max (Abs) (ID) 36A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 207A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Current - Continuous Drain (Id) @ 25°C 26.5A Ta 207A Tc
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Rds On (Max) @ Id, Vgs 1.3m Ω @ 25A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ