NTMFS4943NT1G
RoHS
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Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.3A Ta 41A Tc 41A 2.6W 30V
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Buying Options
Total Price: USD $15.36
Unit Price: USD $15.3577
≥1 USD $15.3577
≥10 USD $12.6008
≥100 USD $12.2075
≥500 USD $11.81325
≥1000 USD $11.41995
Inventory: 1084
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 910mW Ta 22.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.6W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1401pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta 41A Tc
Gate Charge (Qg) (Max) @ Vgs 20.9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.3A
Drain-source On Resistance-Max 0.011Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 31 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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