NTMFS4939NT1G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFET SO8FL 30V
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Buying Options
Total Price: USD $0.32
Unit Price: USD $0.3192
≥1 USD $0.3192
≥10 USD $0.2622
≥100 USD $0.25365
≥500 USD $0.24605
≥1000 USD $0.2375
Inventory: 33265
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 920mW Ta 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.58W
Case Connection DRAIN
Turn On Delay Time 12.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1954pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.3A Ta 53A Tc
Gate Charge (Qg) (Max) @ Vgs 28.5nC @ 10V
Rise Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 21.4 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.3A
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 48 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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