DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 210A
Drain-source On Resistance-Max 0.007Ohm
Drain Current-Max (Abs) (ID) 10.2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 70A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10.2A Ta 70A Tc
Input Capacitance (Ciss) (Max) @ Vds 2516pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 4m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 920mW Ta 43W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ