NTMFS4936NCT3G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 11.6A SO-8FL
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Technical Details
Supply Chain
Factory Lead Time 38 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
Number of Elements 1
Power Dissipation-Max 920mW Ta 43W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.62W
Case Connection DRAIN
Turn On Delay Time 10.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3044pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.6A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 19.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11.6A
Drain-source On Resistance-Max 0.0048Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 96.8 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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