Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 93A
Turn-Off Delay Time 27.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 49.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta 93A Tc
Input Capacitance (Ciss) (Max) @ Vds 4850pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 3.2m Ω @ 30A, 10V
Turn On Delay Time 16.3 ns
Element Configuration Single
Power Dissipation-Max 930mW Ta 48W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ